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| CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 1/4 BTC5103M3 Features * High IC, IC(DC)=5A * Low VCE(sat), 0.3V typically * Good current gain linearity Symbol BTC5103M3 Outline SOT-89 BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limit 80 60 5 5 10 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A W W W C/W C/W C/W C C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature RJA Tj Tstg Note : 1. Single Pulse Pw350s, Duty2%. 2. When mounted on FR-4 PCB with area measuring 10x10x1 mm 3. When mounted on ceramic with area measuring 40x40x1 mm BTC5103M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 fT Min. 80 60 5 82 80 Typ. 0.3 8 Max. 10 5 10 1 1.5 1.5 390 Unit V V V A mA A V V V MHz Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 2/4 Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=60V. IE=0 VCE=60V. IB=0 VEB=5V,IC=0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=1A VCE=5V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=500mA, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification Of hFE 1 Rank Range P 82~180 Q 120~270 R 180~390 BTC5103M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 10000 Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE VBE(SAT)@IC=10IB VCE=4V 1000 100 100 VCE(SAT)@IC=10IB VCE=2V 10 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage vs Collector Current 10000 On Voltage---VBE(ON)(mV) VCE=2V Power Derating Curves 2.5 Power Dissipation---PD(W) 2 1.5 1 0.5 0 See Note 3 on page 1 See Note 2 on page 1 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 Ambient Temperature---Ta() 200 BTC5103M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 4/4 Marking: 1 2 C 3 H 053 B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC5103M3 CYStek Product Specification |
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